Voltage-amplified heat rectification in SIS junctions

The control of thermal fluxes - magnitude and direction - in mesoscale and nanoscale electronic circuits can be achieved by means of heat rectification using thermal diodes in two-terminal systems. The rectification coefficient R, given by the ratio of forward and backward heat fluxes, varies with the design of the diode and the working conditions under which the system operates. A value of R≪1 or